MURS405 Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Surface Mount Rectifiers

MURS405 THRU MURS460
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 4.0 Amperes
0.126 (3.20)
0.114 (2.90)
DO-214AB/SMC
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
0.012(0.305)
0.006(0.152)
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.103(2.62)
0.079(2.06)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case : JEDEC DO-214AB molded plastic body over passivated chip
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight :0.007 ounce, 0.25grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MDD Catalog Number
MURS MURS MURS MURS MURS MURS MURS MURS _UNITS
405 410 415 420 430 440 450 460
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 50 100 150 200 300 400 500 600
V
V_RMS 35
70 105 140 210 280 350 420
V
V_DC 50 100 150 200 300 400 500 600
V
Maximum average f orw ard rectif ied current
I_{F (AV)}
4.0
A
@T_A=75
Peak f orw ard surge current
8.3ms single half -sine-w ave
I_{F SM}
125.0
A
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 4.0A
V_F
0.89
1.28
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=125
10.0
100.0
A
Maximum reverse recovery time (Note1)
t_rr
25
50
ns
Typical junction capacitance
(Note2)
C_J
95
pF
Typical thermal resistance
(Note3)
R_{θ J A}
20
/W
Operating junction temperature range
T_J
- 55 to + 150
Storage temperature range
T_STG
- 55 to + 150
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.