1SS387 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1SS387
High Speed Switching Diode
FEATURES
z Low forward voltage.
z Fast reverse recovery time.
z Small total capacitance.
Pb
Lead-free
APPLICATIONS
z High-speed switching in surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
1SS387
G
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Surge current(10ms)
Total power dissipation
Junction temperature
Storage temperature
V_RRM
V_R
I_O
I_FSM
P_tot
T_j
T_stg
85
V
80
V
100
mA
1
A
150
mW
125
℃
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol Min.
V_F
I_R
C_d
t_rr
Typ.
0.62
0.75
0.98
0.5
1.6
Max.
1.2
0.1
0.5
3
4
Unit
V
V
V
μA
μA
pF
ns
Conditions
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=10mA
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified