12N65 Datasheet, PDF (1/4 Pages) Unisonic Technologies – 12A, 650V N-CHANNEL POWER MOSFET

12N65 Series
N-Channel MOSFET
Industrial model
QB12N65C
QF12N65C
Poplular name
12N65B
12N65F
Package identificattion Packing method
B: TO-220AB
F: TO-220FP
TUBE
Quantity per tube Quantity per box ^{Quantity per carton}
50/tube
1Kpcs/box
5Kpcs
■Features
　Originative New Design
　Superior Avalanche Rugged Technology
　Robust Gate Oxide Technology
　Very Low Intrinsic Capacitances
　Excellent Switching Characteristics
　Unrivalled Gate Charge: 38nC(Typ.)
　Extended Safe Operating Area
　Lower R_DS(ON): 0.67Ω(Typ.) @ V_GS=10V
　100% Avalanche Tested
　Package: TO-220AB & TO-220F
I_D=12A
BV_DSS=650V
R_DS(on)=0.67Ω
12N65 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
　
　
3S
■ Absolute Maximum Ratings（T_C=25℃ unless otherwise specified）
Symbol
Parameter
V_DSS
I_D
Drain-Source Voltage
Drain Current－Continuous (T_C=25℃)
Drain Curren－Continuous (T_C=100℃)
I_DM
Drain Current – Pulsed (Note 1)
V_GS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy (Note 2)
I_AR
Avalanche Current (Note 1)
E_AR
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
P_D
Power Dissipation (T_C=25℃)
Power Dissipation - Derate above 25℃
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
　 * Drain current limited by maximum junction temperature （ TO-220F ）
■ Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
--
0.56
0.5
--
--
62.5
Value
TO-220AB TO-220F
650
600
12
12*
7.4
7.4*
48
48*
±30
±30
860
870
12
12
22.5
22.5
4.5
4.5
225
51
1.78
0.41
-50 ~ +150
300
TO-220F
Typ.
Max.
--
2.43
--
--
--
62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Units
℃/W
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