10N65F Datasheet, PDF (1/4 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – 650V N-Channel Power MOSFET

10N65 F
650V N-Channel Power MOSFET
Features
◆10A, 650V, R_DS(on) =0.85 Ω@V_GS=10V
◆Fast Switching
◆Improved dv/dt capability
◆100% avalanche tested
◆Low gate charge
Application
◆Electronic Ballast
◆Electronic Transformer
◆Switching mode power supply
Absolute Maximum Ratings(Tc=25°C unless otherwise noted)
Symbol
Parameters
VDSS Drain-source Voltage
Value
650
VGS Gate-source Voltage
±30
ID
Continuous Drain Current
--TC=25°C
10
--TC=100°C
5.8
IDM
Drain Current-Pulsed ①
40
P_D
Power Dissipation
--(TC = 25°C)
50
-- Derate above 25°C
4.8
T_j
Junction Temperature
150
T_STG
E_AS
I_AR
Storage Temperature
Single Pulse Avalanche Energy②
Avalanche Current①
-55-150
250
10
Thermal Characteristics
Symbol
Parameters
R_θJC
Thermal Resistance Junction-case
Min
Typ
Max
2.5
R_θJA
Thermal Resistance Junction-ambient
62.5
Unit
V
V
A
A
A
W
W/°C
°C
°C
mJ
A
Unit
°C /W
°C /W
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