CMT60N06G Datasheet, PDF (1/7 Pages) Champion Microelectronic Corp. – N-CHANNEL Logic Level Power MOSFET

APPLICATION
‹ DC motor control
‹ UPS
‹ Class D Amplifier
V_DSS
R_DS(ON) Typ.
60V
15.8mΩ
PIN CONFIGURATION
TO-220
Front View
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
FEATURES
‹ Low ON Resistance
‹ Low Gate Charge
‹ Peak Current vs Pulse Width Curve
‹ Inductive Switching Curves
I_D
60A
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current － Continuous Tc = 25℃, V_GS@10V
－ Continuous Tc = 100℃, V_GS@10V
－ Pulsed Tc = 25℃, V_GS@10V (Note 2)
Gate-to-Source Voltage － Continue
Total Power Dissipation
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=144μH,I_D=40 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
V_DSS
I_D
I_D
I_DM
V_GS
P_D
dv/dt
T_J, T_STG
E_AS
T_L
T_PKG
I_AS
Value
60
60
43
241
±20
150
1.0
4.5
-55 to 175
500
300
260
60
Unit
V
A
V
W
W/℃
V/ns
℃
mJ
℃
℃
A
THERMAL RESISTANCE
Symbol
Parameter
R_θJC
Junction-to-case
Min Typ
R_θJA
Junction-to-ambient
Max
1.0
62
Units
℃/W
℃/W
Test Conditions
Water cooled heatsink, P_D adjusted for a peak junction
temperature of +175℃
1 cubic foot chamber, free air
2006/03/07 Rev 1.1
Champion Microelectronic Corporation
Page 1