CMT60N03G Datasheet, PDF (1/5 Pages) Champion Microelectronic Corp. – N-CHANNEL Logic Level Power MOSFET

APPLICATION
‹ Buck Converter High Side Switch
‹ Other Applications
V_DSS
30V
R_DS(ON) Typ.
10.8mΩ
PIN CONFIGURATION
TO-252
Front View
TO-263
Front View
D
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
FEATURES
‹ Low ON Resistance
‹ Low Gate Charge
‹ Peak Current vs Pulse Width Curve
I_D
‹ Inductive Switching Curves
50A
‹ Improved UIS Ruggedness
SYMBOL
D
12 3
1 23
G
S
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current － Continuous Tc = 25℃, V_GS@10V (Note 2)
－ Continuous Tc = 100℃, V_GS@10V (Note 2)
－ Pulsed Tc = 25℃, V_GS@10V (Note 3)
Gate-to-Source Voltage － Continue
Total Power Dissipation
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,I_D=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
V_DSS
I_D
I_D
I_DM
V_GS
P_D
dv/dt
T_J, T_STG
E_AS
T_L
T_PKG
I_AS
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
Unit
V
A
V
W
W/℃
V/ns
℃
mJ
℃
℃
THERMAL RESISTANCE
Symbol
Parameter
R_θJC
Junction-to-case
Min Typ
R_θJA
Junction-to-ambient
(PCB Mount)
R_θJA
Junction-to-ambient
Max
2.4
50
62
Units
℃/W
℃/W
℃/W
Test Conditions
Water cooled heatsink, P_D adjusted for a peak junction
temperature of +150℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1