CMT55N03G Datasheet, PDF (1/6 Pages) Champion Microelectronic Corp. – 25V N-CHANNEL ENHANCEMENT-MODE MOSFET

CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
APPLICATION
‹ Vds=25V
‹ R_DS(ON)=6 mΩ (Max.) , VGS @10V, Ids@30A
‹ R_DS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A
PIN CONFIGURATION
TO-252
Front View
FEATURES
‹ Advanced trench process technology
‹ High Density Cell Design For Ultra Low On-Resistance
‹ Specially Designed for DC/DC Converters and Motor
Drivers
‹ Fully Characterized Avalanche Voltage and Current
‹ Improved Shoot-Through FOM
SYMBOL
D
G
12 3
Maximum Ratings and Thermal Characteristics
(TA=25℃ unless otherwise notes)
S
N-Channel MOSFET
Drain - Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current¹⁾
Maximum Power Dissipation
Rating
Operating Junction and Storage Temperature Range
Junction – to –Case Thermal Resistance
Junction – to Ambient Thermal Resistance (PCB mount)²⁾
T_A=25℃
T_A=75℃
Symbol
V_DS
V_GS
I_D
I_DM
P_D
P_D
T_J / T_STG
R_θJC
R_θJA
Value
25
±20
55
100
70
42
-55 to150
1.8
50
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
Unit
V
V
A
A
W
W
℃
℃/W
℃/W
2007/03/15 Rev1.0
Champion Microelectronic Corporation
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