CMT2N7002_10 Datasheet, PDF (1/6 Pages) Champion Microelectronic Corp. – SMALL SIGNAL MOSFET

CMT2N7002
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance.
It can be used in most applications requiring up to 115mA DC
and can deliver pulsed currents up to 800mA. This product is
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications.
FEATURES
‹ High Density Cell Design for Low R_DS(ON)
‹ Voltage Controlled Small Signal Switch
‹ Rugged and Reliable
‹ High Saturation Current Capability
PIN CONFIGURATION
SYMBOL
SOT-23, SOT-323
SOT-363
D
Top View
Top View
D2 G1 S1
3
G
1
2
S2 G2 D1
ORDERING INFORMATION
Part Number
Package
CMT2N7002
SOT-23
CMT2N7002G*
SOT-23
CMT2N7002WG*
SOT-323
CMT2N7002DWG*
SOT-363
CMT2N7002X*
SOT-23
CMT2N7002WX*
SOT-323
CMT2N7002DWX*
SOT-363
*Note: G : Suffix for Pb Free Product W: Suffix for Package SOT-323
S
N-Channel MOSFET
X : Suffix for Halogen Free Product
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R_GS = 1.0MΩ)
Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
Derate above 25℃
Single Pulse Drain-to-Source Avalanche Energy － T_J = 25℃
(V_DD = 50V, V_GS = 10V, I_AS = 0.8A, L = 30mH, R_G = 25Ω)
Operating and Storage Temperature Range
Thermal Resistance － Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
V_DSS
V_DGR
I_D
I_DM
V_GS
V_GSM
P_D
E_AS
T_J, T_STG
θ_JA
T_L
Value
60
60
115
800
±20
±40
225
1.8
9.6
-55 to 150
417
300
Unit
V
V
mA
V
V
mW
mW/℃
mJ
℃
℃/W
℃
2010/03/23 Rev. 1.9
Champion Microelectronic Corporation
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