CMT2N7002K_10 Datasheet, PDF (1/5 Pages) Champion Microelectronic Corp. – SMALL SIGNAL MOSFET

CMT2N7002K
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching and ESD
enhanced performance. It can be used in most applications
requiring up to 115mA DC and can deliver pulsed currents up
to 800mA. This product is particularly suited for low voltage, low
current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
‹ High Density Cell Design for Low R_DS(ON)
‹ Voltage Controlled Small Signal Switch
‹ Rugged and Reliable
‹ High Saturation Current Capability
‹ ESD Protected 2KV HBM
PIN CONFIGURATION
SYMBOL
SOT-23
TOP View
3
1
2
ORDERING INFORMATION
Part Number
CMT2N7002K
CMT2N7002KX*
*Note: X : Suffix for Halogen Free Product
Package
SOT-23
SOT-23
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R_GS = 1.0MΩ)
Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Thermal Resistance － Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
V_DSS
V_DGR
I_D
I_DM
V_GS
V_GSM
P_D
T_J, T_STG
θ_JA
T_L
Value
60
60
115
800
±15
±15
225
1.8
-55 to 150
417
300
Unit
V
V
mA
V
V
mW
mW/℃
℃
℃/W
℃
2010/03/23 Rev. 1.2
Champion Microelectronic Corporation
Page 1