|
CMT2N7002K Datasheet, PDF (1/5 Pages) Champion Microelectronic Corp. – SMALL SIGNAL MOSFET | |||
|
CMT2N7002K
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching and ESD
enhanced performance. It can be used in most applications
requiring up to 115mA DC and can deliver pulsed currents up
to 800mA. This product is particularly suited for low voltage, low
current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
 High Density Cell Design for Low RDS(ON)
 Voltage Controlled Small Signal Switch
 Rugged and Reliable
 High Saturation Current Capability
 ESD Protected 2KV HBM
PIN CONFIGURATION
SYMBOL
SOT-23
TOP View
3
1
2
ORDERING INFORMATION
Part Number
CMT2N7002K
CMT2N7002KX*
*Note: X : Suffix for Halogen Free Product
Package
SOT-23
SOT-23
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (RGS = 1.0Mâ¦)
Drain to Current ï¼ Continuous
ï¼ Pulsed
Gate-to-Source Voltage ï¼ Continue
ï¼ Non-repetitive
Total Power Dissipation
Derate above 25â
Operating and Storage Temperature Range
Thermal Resistance ï¼ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â from case for 10 seconds
Symbol
VDSS
VDGR
ID
IDM
VGS
VGSM
PD
TJ, TSTG
θJA
TL
Value
60
60
115
800
±15
±15
225
1.8
-55 to 150
417
300
Unit
V
V
mA
V
V
mW
mW/â
â
â/W
â
2009/07/17 Rev. 1.1
Champion Microelectronic Corporation
Page 1
|
▷ |