CMT08N50_09 Datasheet, PDF (1/7 Pages) Champion Microelectronic Corp. – POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy
in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
CMT08N50
POWER FIELD EFFECT TRANSISTOR
FEATURES
‹ Robust High Voltage Termination
‹ Avalanche Energy Specified
‹ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
‹ Diode is Characterized for Use in Bridge Circuits
‹ I_DSS and V_DS(on) Specified at Elevated Temperature
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － T_J = 25℃
(V_DD = 100V, V_GS = 10V, I_L = 8A, L = 10mH, R_G = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
I_D
I_DM
V_GS
V_GSM
P_D(Max)
T_J, T_STG
E_AS
θ_JC
θ_JA
T_L
Value
8.0
24
±30
±40
83
30
-55 to 150
320
1.0
62.5
260
Unit
A
V
V
W
℃
mJ
℃/W
℃
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 1