CMT04N60_11 Datasheet, PDF (1/8 Pages) Champion Microelectronic Corp. – POWER MOSFET

CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to ‹
withstand high energy in the avalanche mode and switch ‹
efficiently. This new high energy device also offers a ‹
drain-to-source diode with fast recovery time. Designed for ‹
high voltage, high speed switching applications such as ‹
power supplies, converters, power motor controls and ‹
bridge circuits.
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
D
TO-220/TO-220FP
TO-252
Front View
Front View
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current － Continuous
Rating
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － T_J = 25℃
(V_DD = 100V, V_GS = 10V, I_L = 4A, L = 10mH, R_G = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
I_D
I_DM
V_GS
V_GSM
P_D
T_J, T_STG
E_AS
θ_JC
θ_JA
T_L
Value
4.0
14
±30
±40
83
30
-55 to 150
80
1.30
100
260
Unit
A
V
V
W
℃
mJ
℃/W
℃
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
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