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CMT04N60 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – POWER MOSFET | |||
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CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to Â
withstand high energy in the avalanche mode and switch Â
efficiently. This new high energy device also offers a Â
drain-to-source diode with fast recovery time. Designed for Â
high voltage, high speed switching applications such as Â
power supplies, converters, power motor controls and Â
bridge circuits.
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
Top View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current ï¼ Continuous
ï¼ Pulsed
Gate-to-Source Voltage ï¼ Continue
ï¼ Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy ï¼ TJ = 25â
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25â¦)
Thermal Resistance ï¼ Junction to Case
ï¼ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
4.0
14
±30
±40
83
30
-55 to 150
80
1.30
100
260
Unit
A
V
V
W
â
mJ
â/W
â
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 1
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