CMS-S060-060 Datasheet, PDF (1/1 Pages) Champion Microelectronic Corp. – SCHOTTKY BARRIER DIODE

CMS-S060-060
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts
* Guard ring protection
* Low reverse leakage current
A
B
Electrical Characteristics
Chip size(A):
1.524* 1.524 mm²
Bond Pad
size(B) :
1.422 *1.422 mm²
Thickness :
300µm ± 20µm
Metalization : Anode Ti/Ni/Ag
Metalization : Cathode Ti/Ni/Ag
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt
at IF : 3.0Amp. 25^°C
VF max
0.70
Volt
Minimum Instantaneous Reverse Voltage
at IR : 300 uA 25^°C
VR min.
63
Minimum Non-repetitive Peak Surge current at 25^°C
IFSM
80
Storage Temperature
TSTG
-65 to +125
Volt.
Amp
°_C
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
TEL: [phone]
FAX: [phone]
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
TEL: [phone]
FAX: [phone]
2002/04/24 Rev. 1
Champion Microelectronic Corporation
Page 1