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CEM4269 Datasheet, PDF (6/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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N-CHANNEL
10 VDS=20V
ID=6A
8
6
4
2
0
0
4
8 12 16 20 24
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
P-CHANNEL
10 VDS=-20V
ID=-5A
8
6
4
2
0
0
4
8
12
16
20
Qg, Total Gate Charge (nC)
Figure 15. Gate Charge
CEM4269
102
RDS(ON)Limit
101
1ms
10ms
100ms
5
1s
100
DC
10-1
TA=25 C
TJ=150 C
Single Pulse
10-2 10-2
10-1
100
101
102
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
102
RDS(ON)Limit
101
1ms
10ms
100ms
100
DC
10-1
TA=25 C
TJ=150 C
10-2 Single Pulse
10-2
10-1
100
101
102
-VDS, Drain-Source Voltage (V)
Figure 16. Maximum Safe
Operating Area
6
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