CER6080 Datasheet, PDF (5/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

P-CHANNEL
25
-V_GS=10,8,6,5V
20
15
10
5
-V_GS=3.0V
0
0.0
1.0
2.0
3.0
4.0
5.0
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
1200
1000
Ciss
800
600
400
200
Coss
0 ^Crss
0
6
12
18
24
30
-VDS, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3
V_DS=V_GS
1.2 ^ID^=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
5
CER6080
5
4
3
2
25 C
1
T_J=125 C
-55 C
0
0.0 1.0 2.0 3.0 4.0 5.0
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2
I_D=-3.3A
1.9 ^VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current