CES2310 Datasheet, PDF (3/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

15
V_GS=10,8,6,3V
12
9
6
V_GS=2V
3
0
0
0.5
1
1.5
2
2.5
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
Ciss
600
450
300
150
Coss
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CES2310
10
25 C
8
6
4
2
T_J=125 C
-55 C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 _ID=4.8A
1.9 ^VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current