CEP75N10 Datasheet, PDF (3/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP75N10/CEB75N10
30
V_GS=10,9,8,7,6V
25
V_GS=5V
20
140
25 C
105
15
10
V_GS=4V
5
0
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
70
T_J=125 C
35
-55 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4800
4000
Ciss
3200
2400
1600
800
Coss
0 ^Crss
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6 _ID=25A
2.2 ^VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3