CEP04N7G Datasheet, PDF (3/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP04N7G/CEB04N7G
CEF04N7G
6
V_GS=10,8,7V
5
4
3
2
V_GS=4V
1
0
0.0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
9
7.5
6
4.5
3
1.5
0
1
25 C
T_J=125C
-55 C
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
800
600
Ciss
400
200
0
0
Coss
Crss
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 _ID=2A
1.9 ^VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10-1
0.4
0.7
1.0
1.3
1.7
2.0
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3