CEP02N65A Datasheet, PDF (3/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP02N65A/CEB02N65A
CEF02N65A
0.6
V_GS=10,8,7V
0.5
0.4
V_GS=5V
0.3
0.2
0.1
V_GS=4V
0
0.0 1
2
3
45
6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
0
1
25 C
T_J=125 C
-55 C
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250
Ciss
200
150
100
Coss
50
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 _ID=0.5A
2.5 ^VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10⁰
10^-1
10^-2
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3