CEM4311 Datasheet, PDF (3/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

50
-V_GS=10,8,7,6,5V
40
30
-V_GS=4V
20
10
-V_GS=3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3600
3000
Ciss
2400
1800
1200
Coss
600
Crss
0
0
5
10
15
20
25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
V_DS=V_GS
1.2 ^ID^=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5 - 18
CEM4311
50
40
30
20
25 C
10
T_J=125 C
-55 C
0
0
1
2
3
4
5
6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
I_D=-7A
1.9 ^VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current