CED13N07 Datasheet, PDF (3/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED13N07/CEU13N07
15
V_GS=10,8,6,5V
12
V_GS=4V
9
25
25 C
20
15
6
10
3
V_GS=3V
0
0
1
2
3
4
5
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
5
T_J=125 C
-55 C
0
0
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
600
500
Ciss
400
300
200
Coss
100
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
V_DS=V_GS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6
I_D=5.5A
2.2 ^VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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