CEU3100 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED3100/CEU3100
Electrical Characteristics T_A = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics ^c
BV_DSS
I_DSS
I_GSSF
IGSSR
V_GS = 0V, I_D = 250µA
30
V_DS = 30V, V_GS = 0V
V_GS = 20V, V_DS = 0V
V_GS = -20V, V_DS = 0V
V
1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics ^d
V_GS(th)
R_DS(on)
V_GS = V_DS, I_D = 250µA
1
V_GS = 10V, I_D = 20A
V_GS = 4.5V, I_D =15A
3
V
8
10 mΩ
12
17 mΩ
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^d
C_iss
C_oss
V_DS = 15V, V_GS = 0V,
f = 1.0 MHz
895
215
pF
pF
C_rss
160
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
t_d(on)
t_r
t_d(off)
V_DD = 15V, I_D = 10A,
V_GS = 10V, R_GEN = 3Ω
Turn-Off Fall Time
t_f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
V_DS = 15V, I_D = 10A,
V_GS = 10V
Q_gd
Drain-Source Diode Characteristics and Maximun Ratings
11
22
ns
7
14
ns
31
62
ns
5
10
ns
21
27
nC
2
nC
6
nC
Drain-Source Diode Forward Current ^b
I_S
Drain-Source Diode Forward Voltage ^c
V_SD
V_GS = 0V, I_S = 20A
51
A
1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
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