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| CES2336 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor | |||
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CES2336
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min Typ Max Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
60
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
VGS = VDS, ID = 250µA
1
3
V
RDS(on)
VGS = 10V, ID = 1.8A
VGS = 4.5V, ID = 1.4A
190 250 mâ¦
7
250 330 mâ¦
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
230
45
pF
pF
Crss
25
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 27.5V, ID = 1.8A,
VGS = 10V, RGEN = 3â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 27.5V, ID = 1.8A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.8A
8
16
ns
2.4
4.8
ns
16.7 33.4 ns
1.6
3.2
ns
2.4 3.2 nC
0.8
nC
1.1
nC
1.8
A
1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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