 English |
|
|
|
|
|
|
|
| CES2324 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor | |||
| |||
| ◁ |
CES2324
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
20
VDS = 16V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
V
1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
VGS = VDS, ID = 250µA 0.5
1.5
V
RDS(on)
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
35
45 mâ¦
7
50
80 mâ¦
gFS
VDS = 10V, ID = 4.0A
8
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 8V, VGS = 0V,
f = 1.0 MHz
500
pF
300
pF
140
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 4.2A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20
40
ns
18
40
ns
60 108 ns
28
56
ns
10
15
nC
2.3
nC
2.9
nC
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.3A
1.3
A
1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
7 - 27
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese