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| CES2313A Datasheet, PDF (2/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor | |||
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CES2313A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA -30
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
-1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -1
VGS = -10V, ID = -3.8A
VGS = -4.5V, ID = -3A
-3
V
45
55 mâ¦
66
86 mâ¦
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
VDS = -15V, ID = -3.8A
4
S
Ciss
Coss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
640
135
pF
pF
Crss
95
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -3.8A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
11
20
ns
5
10
ns
30
60
ns
7
14
ns
13
17
nC
2
nC
3
nC
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -3.8A
-3.8
A
-1.3
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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