CEP75N06 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP75N06/CEB75N06
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics ^b
BV_DSS
V_GS = 0V, I_D = 250µA
60
I_DSS
V_DS = 58V, V_GS = 0V
I_GSSF
V_GS = 20V, V_DS = 0V
IGSSR
V_GS = -20V, V_DS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics ^c
V_GS(th)
R_DS(on)
V_GS = V_DS, I_D = 250µA
2
V_GS = 10V, I_D = 50A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^c
g_FS
C_iss
C_oss
C_rss
V_DS = 25V, I_D = 50A
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
t_d(on)
t_r
t_d(off)
V_DD = 30V, I_D = 50A,
V_GS = 10V, R_GEN = 3.6Ω
Turn-Off Fall Time
t_f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
V_DS = 48V, I_D = 50A,
V_GS = 10V
Q_gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
I_S
Drain-Source Diode Forward Voltage ^b
V_SD
V_GS = 0V, I_S = 50A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Typ
10
21
3650
735
40
24
5.5
50
12
67.9
15
20.4
Max Units
V
25
µA
100 nA
-100 nA
4
V
12 mΩ
S
pF
pF
pF
48
ns
11
ns
100 ns
24
ns
90.3 nC
nC
nC
87
A
1.3
V
2