CEP6060N Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP6060N/CEB6060N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
4
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics ^b
BV_DSS
V_GS = 0V, I_D = 250µA
60
I_DSS
V_DS = 60V, V_GS = 0V
I_GSSF
V_GS = 20V, V_DS = 0V
IGSSR
V_GS = -20V, V_DS = 0V
V
25
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V_GS(th)
V_GS = V_DS, I_D = 250µA
2
4
V
R_DS(on)
V_GS = 10V, I_D = 24A
19
25 mΩ
Dynamic Characteristics ^c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^c
g_FS
C_iss
C_oss
C_rss
V_DS = 10V, I_D = 24A
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
t_d(on)
t_r
t_d(off)
V_DD = 30V, I_D = 19A,
V_GS = 10V, R_GEN = 4.7Ω
Turn-Off Fall Time
t_f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
V_DS = 48V, I_D = 38A,
V_GS = 10V
Q_gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
I_S
Drain-Source Diode Forward Voltage ^b
V_SD
V_GS = 0V, I_S = 24A
40
S
1320
pF
310
pF
40
pF
16
32
ns
3
6
ns
36
72
ns
4
8
ns
28.7 38.1 nC
6.3
nC
9.7
nC
42
A
1.3
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 42A .
g.Full package VSD test condition IS = 42A .
h.L = 0.19mH, IAS = 42A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2