CEP02N9 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP02N9/CEB02N9
CEF02N9
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics ^b
BV_DSS
I_DSS
I_GSSF
IGSSR
V_GS = 0V, I_D = 250µA
900
V_DS = 900V, V_GS = 0V
V_GS = 30V, V_DS = 0V
V_GS = -30V, V_DS = 0V
V
25
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V_GS(th)
R_DS(on)
V_GS = V_DS, I_D = 250µA
2
V_GS = 10V, I_D = 1.3A
4
V
5.3 6.8
Ω
Dynamic Characteristics ^c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^c
C_iss
C_oss
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
690
70
pF
pF
C_rss
15
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
t_d(on)
t_r
t_d(off)
V_DD = 450V, I_D = 2.2A,
V_GS = 10V, R_GEN = 25Ω
Turn-Off Fall Time
t_f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
V_DS = 720V, I_D = 2.2A,
V_GS = 10V
Q_gd
Drain-Source Diode Characteristics and Maximun Ratings
20
40
ns
34
68
ns
44
88
ns
28
56
ns
16
20
nC
3
nC
7
nC
Drain-Source Diode Forward Current
I_S
Drain-Source Diode Forward Voltage ^b
V_SD
V_GS = 0V, I_S = 2A
2
A
1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
2