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| CEM6867 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – Dual P-Channel Enhancement Mode Field Effect Transistor | |||
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CEM6867
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
Min
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA -60
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA -1
VGS = -10V, ID = -3.1A
VGS = -4.5V, ID = -2.8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -3.1A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = -1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Typ Max Units
V
-1
µA
100 nA
-100 nA
-3
V
100 130 mâ¦
130 170 mâ¦
645
pF
65
pF
40
pF
12
24
ns
4
8
ns
30
60
ns
4
8
ns
12 15.6 nC
1.8
nC
2.5
nC
-1.5
A
-1.2
V
2
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