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| CEH2311 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor | |||
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CEH2311
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA -20
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
V
-1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.6
-1
V
VGS = -4.5V, ID = -4.5A
70
85 mâ¦
VGS = -2.5V, ID = -3.7A
97 130 mâ¦
gFS
VDS = -10V, ID = -4.5A
10
Ciss
Coss
VDS = -8V, VGS = 0V,
f = 1.0 MHz
880
270
Crss
175
S
8
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -10V, ID = -4.5A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1.7A
11
20
ns
5
10
ns
32
65
ns
23
45
ns
11 14.5 nC
1.5
nC
2.1
nC
-1.7 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
8 - 31
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