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| CEG8208 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor | |||
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CEG8208
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
Min
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
20
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA 0.5
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 5A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID =5A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 board,t < 10sec.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Typ
18
24
17
40
115
15
0.35
0.87
3.60
2.01
4.3
1.1
2.5
Max Units
V
1
µA
10
uA
-10
uA
1.2
V
22 mâ¦
32 mâ¦
S
pF
pF
pF
0.7
us
1.8
us
7.5
us
4.3
us
7.5 nC
nC
nC
1.5
A
1.2
V
2
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