 English |
|
|
|
|
|
|
|
| CED6426 Datasheet, PDF (2/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor | |||
| |||
| ◁ |
CED6426/CEU6426
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
VGS = 0V, ID = 250µA
60
IDSS
VDS = 60V, VGS = 0V
IGSSF
VGS = 20V, VDS = 0V
IGSSR
VGS = -20V, VDS = 0V
V
1
µA
100 nA
-100 nA
6
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
1
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 6.4A
3
V
45
66 mâ¦
65
85 mâ¦
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 4.5A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 4.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 8A
10
S
680
pF
80
pF
45
pF
10
20
ns
2.9
5.8
ns
29.7 59.4 ns
2.5
5
ns
12.9 17.1 nC
1.6
nC
2.5
nC
16
A
1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese