CEU55N10 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED55N10/CEU55N10
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 55A, R_DS(ON) = 16mΩ @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
TO-251 & TO-252 package.
D
G
G
S
G
DS
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
100
±20
55
220
83.3
0.55
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Limit
1.8
Units
V
V
A
A
W
W/ C
C
Units
C/W
This is preliminary information on a new product in development now
Details are subject to change without notice .
1
Rev 1. 2011.Dev.
http://www.cetsemi.com