CEU4269_10 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEU4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
40V , 14A , R_DS(ON) = 32mΩ @V_GS = 10V.
R_DS(ON) = 46mΩ @V_GS = 4.5V.
-40V , -12A , R_DS(ON) = 45mΩ @V_GS = 10V.
R_DS(ON) = 65mΩ @V_GS = 4.5V.
G1
Super high dense cell design for extremely low RDS(ON).
D1/D2
G2
High power and current handing capability.
S1
S2
D1/D2
Lead free product is acquired.
S1
TO-252-4L package.
G1
S2
G2
CEU SERIES
TO-252-4L
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^e
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
40
40
V_GS
±20
±20
I_D ^e
14
-12
I_DM
56
-48
10.4
P_D
0.08
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
12
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2010.Aug
http://www.cetsemi.com