CES2312 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CES2312
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 4.5A, R_DS(ON) = 33mΩ @V_GS = 4.5V.
R_DS(ON) = 40mΩ @V_GS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-23 package.
G
D
S
G
SOT-23
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
20
V_GS
±8
I_D
4.5
I_DM
13.5
Maximum Power Dissipation
P_D
1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
2005.November
7 - 22
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