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| CES2308 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor | |||
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CES2308
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 5.4A, RDS(ON) = 27m⦠@VGS = 4.5V.
RDS(ON) = 36m⦠@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-23 package.
G
D
S
G
SOT-23
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
20
VGS
±12
ID
5.4
IDM
22
Maximum Power Dissipation
PD
1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.June
http://www.cetsemi.com
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