CEPF640_08 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEPF640/CEBF640
CEFF640
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF640
CEBF640
CEFF640
V_DSS
200V
200V
200V
R_DS(ON)
0.15Ω
0.15Ω
0.15Ω
I_D
19A
19A
19A ^d
@V_GS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
G
G
G
G
S
D
S
D
S
S
CEB SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
200
±20
19
76
125
1.0
19 ^d
76 ^d
40
0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
3.1
62.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Oct.
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