CEPF634_06 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEPF634/CEBF634
CEIF634/CEFF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF634
V_DSS
250V
R_DS(ON)
0.45Ω
I_D
8.1A
@V_GS
10V
CEBF634
250V 0.45Ω 8.1A
10V
CEIF634
CEFF634
250V 0.45Ω 8.1A
10V
250V 0.45Ω 8.1A ^d 10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
G
G
G
D
D
S
S
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
250
±30
8.1
32
74
0.59
8.1 ^d
32 ^d
38
0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
3.3
62.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2006.July
http://www.cetsemi.com
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