CEPF630_07 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEPF630/CEBF630
CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF630
CEBF630
CEFF630
V_DSS
200V
200V
200V
R_DS(ON)
0.35Ω
0.35Ω
0.35Ω
I_D
10A
10A
10A ^d
@V_GS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
200
±20
10
40
75
0.6
10 ^d
40 ^d
33
0.27
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
3.7
62.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2007.March
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