CEPF630B Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEPF630B/CEBF630B
CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
V_DSS
R_DS(ON)
I_D
@V_GS
CEPF630B 200V 0.4Ω
9A
10V
CEBF630B 200V 0.4Ω
9A
10V
CEIF630B
200V 0.4Ω
9A
10V
CEFF630B 200V 0.4Ω
9A ^e
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
G
G
G
G
D
D
S
S
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
V_GS
I_D
I_DM ^f
200
±30
9
9^e
36
36 ^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
74
35
P_D
0.59
0.28
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
E_AS
150
150
I_AS
9
9
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
3.6
62.5
65
Units
C/W
C/W
2004.November
4 - 194
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