CEP85N75V Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP85N75V/CEB85N75V
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
75V, 85A, R_DS(ON) = 12mΩ @V_GS = 12V.
R_DS(ON) = 13mΩ @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
75
V_GS
±30
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
85
59
340
200
1.33
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
E_AS
880
I_AS
45
Operating and Store Temperature Range
T_J,T_stg
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Limit
0.75
62.5
Units
C/W
C/W
Rev 1. 2012.Aug
http://www.cetsemi.com