CEP80N75 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP80N75/CEB80N75
CEF80N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP80N75
CEB80N75
CEF80N75
V_DSS
75V
75V
75V
R_DS(ON)
13mΩ
13mΩ
13mΩ
I_D
80A
80A
80A ^e
@V_GS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
D
G
G
G
G
S
D
S
D
S
S
CEB SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
V_DS
75
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_GS
±20
I_D
80
80 ^e
I_DM ^f
320
320 ^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
200
75
P_D
1.3
0.5
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
Operating and Store Temperature Range
E_AS
I_AS
T_J,T_stg
880
880
45
45
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
2
62.5
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Feb
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