CEP655N Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP655N/CEB655N
CEI655N/CEF655N
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP655N
V_DSS
150V
R_DS(ON)
0.153Ω
I_D
15A
@V_GS
10V
CEB655N
150V 0.153Ω 15A
10V
CEI655N
CEF655N
150V 0.153Ω 15A
10V
150V 0.153Ω 15A ^d 10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
G
G
G
G
D
D
S
S
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
150
±25
15
60
83
0.56
15 ^d
60 ^d
39
0.26
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
3.8
62.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2005.June
http://www.cetsemi.com