CEP6060R_06 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP6060R/CEB6060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 60A, R_DS(ON) = 25mΩ @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V_GS
±20
Drain Current-Continuous
I_D
60
Drain Current-Pulsed ^a
I_DM
144
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
100
0.7
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
E_AS
168
I_AS
58
Operating and Store Temperature Range
T_J,T_stg
-65 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2
62.5
Units
C/W
C/W
Specification and data are subject to change without notice .
4 - 110
Rev 1. 2006.April
http://www.cetsemi.com