CEP5175 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEP5175/CEB5175
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-55V, -50A, R_DS(ON) = 23mΩ @V_GS = 10V.
R_DS(ON) = 28mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-55
V_GS
±20
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
I_D
-50
-32
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
P_D
- Derate above 25 C
-200
96
0.77
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Limit
1.3
62.5
Units
C/W
C/W
Rev 1. 2014.Apr
http://www.cetsemi.com