CEP4060AL_05 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP4060AL/CEB4060AL
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 15A,R_DS(ON) = 80mΩ @V_GS = 10V.
R_DS(ON) = 95mΩ @V_GS = 5.0V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V_GS
±16
Drain Current-Continuous
I_D
15
Drain Current-Pulsed ^a
I_DM
45
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
50
0.3
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
Units
C/W
C/W
2005.August
http://www.cetsemi.com
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