CEP35P03 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEP35P03/CEB35P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -35A, R_DS(ON) =36mΩ @V_GS = -10V.
R_DS(ON) =57mΩ @V_GS = -5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
-30
±20
-35
-140
71
0.48
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Rev 2. 2005.May
http://www.cetsemi.com
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