CEP30N3 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP30N3/CEB30N3
CEF30N3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP30N3
CEB30N3
CEF30N3
V_DSS
300V
300V
300V
R_DS(ON)
110mΩ
110mΩ
110mΩ
I_D
30A
30A
30A ^e
@V_GS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
G
G
D
S
S
D
S
S
CEB SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
V_DS
300
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_GS
±30
I_D
30
30 ^e
I_DM ^f
120
120 ^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
227
74
P_D
1.8
0.6
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
Operating and Store Temperature Range
E_AS
I_AS
T_J,T_stg
450
30
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.55
1.7
62.5
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Dec
http://www.cetsemi.com