CEP20N06_10 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP20N06/CEB20N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 28A, R_DS(ON) = 40mΩ @V_GS = 10V.
R_DS(ON) = 50mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V_GS
±20
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
I_D
28
20
Drain Current-Pulsed ^a
I_DM
112
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
50
0.4
Operating and Store Temperature Range
T_J,T_stg
-55 to 175
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
3
50
Units
C/W
C/W
Rev 1. 2010.Dec
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